期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 19, 期 4, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2247572
关键词
GaAsSb; GaInAs; InP; Laser; light-emitting diode (LED); type-II
资金
- Excellence Cluster Nanosystems Initiative Munich (NIM2)
Type-II InP-based light sources provide a promising concept for mid-infrared lasers. These have recently made huge progress, as the first electrically and optically pumped lasers could be demonstrated beyond the wavelength limit for type-I InP-based lasers (similar to 2.3 mu m). In this paper, we introduce the material system and device concepts, and report the latest achievements, such as electrically pumped lasing operation up to a wavelength of 2.6 mu m in pulsed mode, continuous-wave resonant-cavity light-emitting diode operation up to a wavelength of 3.3 mu m at 20-80 degrees C and photoluminescence even up to 3.9 mu m.
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