期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 18, 期 1, 页码 443-448出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2011.2158392
关键词
Extreme ultraviolet (EUV) lasers; laser ablation; nanomachining; nanotechology
资金
- National Science Foundation (NSF) Engineering Research Center under NSF [EEC-0310717]
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-05CH11231]
A major challenge in laser machining of microstructures is that of extending the spatial domain to the smaller dimensions of interest in nanotechnology. We demonstrate the feasibility of directly machining nanoscale structures with a focused extreme ultraviolet (EUV) laser beam. Clean sub-200-nm-wide trenches (130-nm full width at half maximum) were ablated on polymethyl methacrylate photoresist by focusing the 46.9-nm wavelength beam from a Ne-like Ar capillary discharge tabletop laser with a Fresnel zone plate lens. Considering that clean 82-nm holes were also ablated using the same laser, it can be expected that focused EUV laser light will enable the machining of significantly smaller features.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据