期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 17, 期 2, 页码 333-346出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2010.2051798
关键词
Integrated optoelectronics; optoelectronic devices; semiconductor lasers; silicon-on-insulator (SOI) technology
资金
- Defense Advanced Research Projects Agency
- Army Research Laboratory [W911NF-05-1-0175, W911NF-04-9-0001]
- Intel [HR0011-08-1-0347]
- HP [SBY572738]
In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. In this platform, a III/V layer is bonded to a fully processed silicon-on-insulator wafer. By changing the bandgap of the III/V quantum wells (QW), low-threshold-current lasers, high-speed modulators, and photodetectors can be fabricated operating at wavelengths of 1.55 mu m. With a QW intermixing technology, these components can be integrated with each other and a complete high-speed optical interconnect can be realized on-chip. The hybrid silicon bonding and process technology are fully compatible with CMOS-processed wafers because high-temperature steps and contamination are avoided. Full wafer bonding is possible, allowing for low-cost and large-volume device fabrication.
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