期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 17, 期 6, 页码 1594-1602出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2011.2116771
关键词
Distributed Bragg reflectors (DBRs); GaN; vertical-cavity surface-emitting laser (VCSEL)
资金
- Ministry of Education
- National Science Council of Taiwan, Taiwan [NSC 98-3114-E009-002-002, NSC 98-3114-E009-009-001, NSC 98-2923-E009-001-MY3]
This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta2O5/SiO2 top DBR, a 7 lambda-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.
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