期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 16, 期 1, 页码 85-92出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2031502
关键词
Electroabsorption effect; Ge/SiGe quantum wells; germanium; optical interconnections; optical modulators; quantum-confined Stark effect (QCSE)
资金
- Intel Corporation
- MARCO Interconnect Focus Center
In this paper, we present observations of quantum confinement and quantum-confined Stark effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator, and demonstrated modulation at 10 GHz and a 3.125-GHz eye diagram for 30-mu m-sized modulators.
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