期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 15, 期 3, 页码 661-672出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2008.2012265
关键词
Mode-locking; optical pulse generation; quantum dot (QD); quantum well (QW); semiconductor lasers
资金
- U.K. Engineering and Physical Sciences Research Council (EPSRC)
- European Commission
- ePIXnet European Network of Excellence
- EPSRC [EP/E064361/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E064361/1] Funding Source: researchfish
This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据