期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 14, 期 4, 页码 1082-1089出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2008.918935
关键词
germanium (Ge); optical interconnects; quantum-confined Stark effect (QCSE); silicon (Si)
Germanium (Ge). and silicon-germanium (Si-Ge) have the potential to integrate optics with Si IC technology. The quantum-confined Stark effect, a strong electroabsorption mechanism often observed in III-V quantum wells (QWs), has been demonstrated in Si-Ge/Ge QWs, allowing optoelectronic modulators in such group IV materials. Here, based on photocurrent electroabsorption experiments on different samples and fitting of the resulting allowed and nominally forbidden transitions, we propose more accurate values for key parameters such as effective masses and band offsets that are required for device design. Tunneling resonance modeling including conduction band nonparabolicity was used to fit the results with good consistency between the experiments and the fitted transitions.
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