期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 50, 期 4, 页码 255-260出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2014.2306997
关键词
InN/GaN; efficiency droop; In rich; localization effect
资金
- National Science Council of Taiwan [NSC 101-2221-E-009-028-MY3, NSC-3113-P-009-007-CC2]
Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm(2), the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.
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