期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 47, 期 9, 页码 1244-1250出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2011.2160450
关键词
Detectivity; GaAsSb; InGaAs; mid-wavelength infrared; p-i-n photodiode; short-wavelength infrared; type-II multiple quantum wells
资金
- Army Research Office
- National Science Foundation [0912672, 0907236]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907236] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [0912672] Funding Source: National Science Foundation
This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compensated and lattice-matched absorption regions have optical response out to 3.4 and 2.8 mu m with dark current densities of 9.7 and 1.66 mA cm(-2), respectively, at 290 K under -0.5 V reverse bias. The carrier transport mechanism responsible for the difference in responsivity and detectivity between strain-compensated and lattice-matched InGaAs/GaAsSb MQWs is discussed.
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