期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 47, 期 11, 页码 1371-1374出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2011.2164898
关键词
Photonic crystal cavities; p-i-n diodes; quantum dots
资金
- National Centre of Competence in Research Quantum Photonics of the Swiss National Science Foundation
We demonstrate resonant excitation of a semiconductor quantum dot embedded in a p-i-n diode structure in and out of a photonic crystal cavity. We investigate the modification of the spontaneous emission rate and the photon collection efficiency of quantum dots due to the presence of a photonic bandgap. The resonant excitation together with deterministic charging of the quantum dot embedded in a photonic crystal, can be used for single electron spin measurement.
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