4.4 Article

Performance Optimization of Antenna-Coupled Al/AlOx/Pt Tunnel Diode Infrared Detectors

期刊

IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 47, 期 1, 页码 126-135

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2081971

关键词

Antennas; infrared detectors; infrared measurements; thin film devices; tunnel diodes

向作者/读者索取更多资源

Signal-to-noise ratio (SNR) is a valuable figure of merit in determining the operating scope of infrared detectors. Antenna-couple metal-oxide-metal diodes have been shown to detect infrared radiation without cooling or applied bias, but so far have been hampered by their SNR. This paper details a comprehensive study of the fabrication parameters that control the formation of the tunneling oxide barrier to optimize the performance of these detectors. Since the tunneling barrier affects both current-voltage and infrared detection characteristics, fabrication parameters can be optimized to improve device performance. The current-voltage characteristics of the devices are detailed in this paper; resistance, nonlinearity, and curvature coefficient are parameterized on fabrication procedures. Infrared detection characteristics are detailed and SNR is studied as a function of device nonlinearity and biasing conditions.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据