期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 47, 期 6, 页码 858-864出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2011.2128299
关键词
Avalanche photodiode; electron-avalanche photodiode; impact ionization; InAs; ionization coefficient; MWIR; SWIR
资金
- Electro Magnetic Remote Sensing Defense Technology Centre
- EPSRC [EP/H031464/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H031464/1] Funding Source: researchfish
The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.
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