期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 47, 期 1, 页码 66-75出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2085422
关键词
Noise; noise measurement; power amplifiers; quantum-well devices; semiconductor optical amplifiers
We investigate the noise figure (NF) of high-power semiconductor InGaAsP optical amplifiers (SOAs) based on the slab-coupled optical waveguide (SCOW) concept having both ultralow optical confinement (Gamma similar to 0.5%) and low optical loss (alpha(i) similar to 0.5 cm(-1)). At 1550 nm and 5-A current bias, the NF of SCOW amplifier (SCOWA) is 5.5 dB, and the small-signal gain and saturation output power are 13 dB and 0.8 W, respectively. A minimum NF of 4.5 dB is achieved at 2-A bias. These NF results represent the lowest reported for a packaged SOA. Using the measured NF, the population inversion factor (n(sp)) of the SCOWA was also estimated. The derived n(sp) values indicate that intervalence band absorption loss, carrier heating, and quasi-bound higher order modes may ultimately limit the noise performance of InGaAsP SOAs.
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