期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 47, 期 5, 页码 591-596出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2011.2107503
关键词
Fe3O4; organic light-emitting devices; p-dopant
资金
- 973 project [2010CB327701]
- Natural Science Foundation China [60977025, 60877019, 90923037]
- Program for New Century Excellent Talents in University [NECT-070354]
Fe3O4 has been demonstrated to be an efficient p-dopant in improving the performance of organic light-emitting devices. This paper investigates in detail the role of Fe3O4 in improving the hole injection and the hole transport by the ultraviolet/visible/near-infrared absorption, x-ray, and ultraviolet photoelectron spectroscopy. The results demonstrated that Fe3O4 as a p-dopant has different effectiveness when it is doped into different host materials. The improved properties of the OLEDs with the p-doped N, N'-diphenyl-N, N'-bis (1,1'-biphenyl)-4,4'-diamine layer is mainly due to the enhanced hole injection through the lowering of the hole injection barrier, while the enhanced hole transport plays a more important role for the OLEDs with the p-doped 4,4',4-tris (3-methylphenylphenylamino) triphenylamine due to their higher ability in the formation of charge transfer complex.
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