期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 46, 期 5, 页码 626-632出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2046140
关键词
Photodetectors; photodiodes
资金
- Defense Advanced Research Projects Agency
- Naval Research Laboratory
We demonstrate two modified uni-traveling carrier photodiode (MUTC) structures that incorporate a charge or cliff layer to attain high-saturation-current. MUTC1 achieved responsivity of 0.82 A/W and 134 mA saturation current at -6-V and 20 GHz. The MUTC2 structure, which has higher doping density in the cliff layer and thinner absorption region, exhibited a higher saturation current of 144 mA (at -5-V) and an improved 3 dB bandwidth of 24 GHz; however, the responsivity was reduced to 0.69 A/W. For MUTC2, a high-saturation-current x bandwidth product of 3456 GHz . mA has been achieved. An intermodulation distortion figure of merit, IP3, > 39 dBm at 20 GHz was observed for both MUTC structures.
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