期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 46, 期 8, 页码 1153-1157出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2044370
关键词
Avalanche breakdown; avalanche photodiode (APD); impact ionization; InAlAs; InP; temperature dependence; tunnelling
资金
- U.K. Department of Trade and Industry/Technology Science Board
- Royal Society
- Engineering Physical Sciences Research Council [EP/D064759/1]
- Engineering and Physical Sciences Research Council [EP/D064759/1] Funding Source: researchfish
- EPSRC [EP/D064759/1] Funding Source: UKRI
Simple analytical expressions for temperature coefficients of breakdown voltage of avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on measurements of temperature dependence of avalanche breakdown voltage in a series of InP and InAlAs diodes at temperatures between 20 and 375 K. While avalanche breakdown voltage becomes more temperature sensitive with avalanche region thickness for both materials, the InAlAs diodes are less sensitive to temperature changes compared to InP diodes.
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