期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 45, 期 9, 页码 1155-1162出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2009.2026652
关键词
Semiconductor optical amplifier; quantum well device; optical switch; integrated optoelectronics
资金
- National Institute of Information and Communications Technology (NICT) of Japan
A monolithic 8: 1 SOA gate switch that integrates an 8-ch SOA gate array, an 8: 1 optical coupler, and a 1-ch SOA gate was developed for use in a large scale optical packet switching system. A 250-mu m-long compact field-flattened coupler (FFC) produces a very small channel-imbalance together with a compact total chip size of 3.0 x 1.0 mm. The device exhibited a large ON-state gain of >14.3 dB and a small total gain deviation of 3.0 dB. The optimized passive waveguide structure successfully suppressed the stray light, which resulted in a record-high ON-OFF extinction ratio of >70 dB. We used a thin tensile-strained multi-quantum well (MQW) active layer which can attain high-saturation output power, low noise, and polarization insensitivity for SOA gates. Due to the coexistence of a high saturation output power and a low noise figure, the device exhibited a very wide input power dynamic range of 20.5 dB for a 10-Gb/s NRZ signal.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据