4.4 Article

Emission Directionality of Semiconductor Ring Lasers: A Traveling-Wave Description

期刊

IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 45, 期 5-6, 页码 431-438

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2009.2014079

关键词

Coupled cavities; ring lasers; semiconductor lasers; thermal effects; traveling-wave modeling

资金

  1. Institut Mediterrani d'Estudis Avanqats (IMEDEA)
  2. Consejo Superior de Investigaciones Cientificas-Universitat de les Illes Balears, Esporles, Spain
  3. [IOLOS-FP6-2005-IST-5]

向作者/读者索取更多资源

We use a traveling-wave model for explaining the experimentally observed changes in the directionality of the emission of semiconductor ring lasers and its different behavior when current is increased or decreased. The modulation of the cavity losses imposed by the light extraction sections together with the thermal shift of the gain spectrum and spatial hole burning in the carrier density play a crucial role in the directionality of the emission and its changes with operation current. The differences as the current is increased or decreased correspond to the different role played by spatial hole burning.

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