期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 45, 期 8, 页码 1029-1042出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2009.2017929
关键词
Intersubband photodetectors; quantum cascade detector; high-speed semiconductor photodetectors
资金
- Engineering and Physical Sciences Research Council [EP/E048811/1] Funding Source: researchfish
- EPSRC [EP/E048811/1] Funding Source: UKRI
This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise behavior, reduced thermal load, and simpler readout circuits. This was demonstrated at wavelengths from the near infrared at 2 mu m to THz radiation at 87 mu m using different semiconductor material systems.
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