期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 11, 页码 1692-1695出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2872346
关键词
Quantum dot light emitting diode; trilayer; white emission; poly(p-phenylene benzobisoxazole) precursor; buffer layer; lowest unoccupied molecular orbital; charge balance
资金
- National Natural Science Foundation of China (NSFC) [61765011, 11774141]
- Outstanding Youth Funds of Jiangxi Province [20171BCB23051]
- Natural Science Foundation of Jiangxi Province [20181BBE58005, 20181BAB202028, 20181BBE50022, 20171BAB202036]
We demonstrate highly efficient white quantum dot light emitting diode (QLED) devices using three separate quantum dots emission layers. The three luminescent layers are separated by two poly(p-phenylene benzobisoxazole) precursor buffer layers. These organic buffer layers have high lowest unoccupied molecular orbital levels, which contributes to the blocking of extra electrons and the balance of hole and electron injection. The developed trilayered white QLED device with organic buffer exhibits a high external quantum efficiency of 9.6 %, 16.4 cd/A in current efficiency, and a bright luminance of 4245.3 cd/m(2).
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