4.6 Article

Highly Efficient Trilayered White Quantum Dot Light Emitting Diodes Based on Organic Buffer Layers

期刊

IEEE ELECTRON DEVICE LETTERS
卷 39, 期 11, 页码 1692-1695

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2872346

关键词

Quantum dot light emitting diode; trilayer; white emission; poly(p-phenylene benzobisoxazole) precursor; buffer layer; lowest unoccupied molecular orbital; charge balance

资金

  1. National Natural Science Foundation of China (NSFC) [61765011, 11774141]
  2. Outstanding Youth Funds of Jiangxi Province [20171BCB23051]
  3. Natural Science Foundation of Jiangxi Province [20181BBE58005, 20181BAB202028, 20181BBE50022, 20171BAB202036]

向作者/读者索取更多资源

We demonstrate highly efficient white quantum dot light emitting diode (QLED) devices using three separate quantum dots emission layers. The three luminescent layers are separated by two poly(p-phenylene benzobisoxazole) precursor buffer layers. These organic buffer layers have high lowest unoccupied molecular orbital levels, which contributes to the blocking of extra electrons and the balance of hole and electron injection. The developed trilayered white QLED device with organic buffer exhibits a high external quantum efficiency of 9.6 %, 16.4 cd/A in current efficiency, and a bright luminance of 4245.3 cd/m(2).

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