1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO2 layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga2O3 MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a L-gd = 20 mu m device. This is the first report of lateral Ga2O3 MOSFET with more than 1.8 kV breakdown voltage. For a device with L-gd = 1.8 mu m, the average electric field strength is calculated to be 2.2 +/- 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.