期刊
IEEE ELECTRON DEVICE LETTERS
卷 39, 期 9, 页码 1385-1388出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2859049
关键词
Field plate; Fluorinert; spin-on-glass; gallium oxide; SOG doping; power MOSFET; air breakdown
资金
- NSF [ECCS 1607833]
- UB ReNEW
- SUNY MAM
A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO2 layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga2O3 MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a L-gd = 20 mu m device. This is the first report of lateral Ga2O3 MOSFET with more than 1.8 kV breakdown voltage. For a device with L-gd = 1.8 mu m, the average electric field strength is calculated to be 2.2 +/- 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.
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