期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 9, 页码 906-908出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2334394
关键词
GaN; AlGaN; MOS-HEMT; normally-off; enhancement-mode; insulated gate; PECVD SiO2
资金
- U.K. Defence Science and Technology Laboratory [DSTLX-1000064098]
- Engineering and Physical Sciences Research Council, U.K. [EP/K014471/1]
- Engineering and Physical Sciences Research Council [EP/K014471/1] Funding Source: researchfish
- EPSRC [EP/K014471/1] Funding Source: UKRI
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (V-th) of 3 and 2 V, and very high maximum drain currents (I-DSmax) of over 450 and 650 mA/mm, at a gate voltage (V-GS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.
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