期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 3, 页码 330-332出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2300897
关键词
AlGaN/GaN; high electron mobility transistor (HEMT); light emitting diode (LED); metal organic chemical vapor deposition (MOCVD)
资金
- Research Grants Council Theme-Based Research Scheme of the Hong Kong Special Administrative Government [T23-612/12-R]
Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors (HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been demonstrated by metal organic chemical vapor deposition selective growth technique. The integrated HEMT-LED exhibits a peak transconductance (G(m)) of 244 mS/mm, a maximum drain current (I-d) of 920 mA/mm, and an ON-resistance (R-on) of 2.6 Omega center dot mm. The forward voltage (V-F) of the LED is 3.1 V under an injection current of 10 mA. The integrated LED emits modulated light power efficiently at a wavelength of 470 nm by a serially connected GaN HEMT, showing potential applications such as solid-state lighting, displays, and visible light communications.
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