Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD

Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors (HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been demonstrated by metal organic chemical vapor deposition selective growth technique. The integrated HEMT-LED exhibits a peak transconductance (G(m)) of 244 mS/mm, a maximum drain current (I-d) of 920 mA/mm, and an ON-resistance (R-on) of 2.6 Omega center dot mm. The forward voltage (V-F) of the LED is 3.1 V under an injection current of 10 mA. The integrated LED emits modulated light power efficiently at a wavelength of 470 nm by a serially connected GaN HEMT, showing potential applications such as solid-state lighting, displays, and visible light communications.