期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 3, 页码 372-374出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2296658
关键词
AlGaN; avalanche photodiodes; separate absorption and multiplication; solar blind; photo-electrochemical treatment
资金
- National 973 Project, China [2012CB619306, 2011CB301900]
- NSF of Jiangsu Province, China [BK2011010]
- NSFC [61274075, 60936004, 60990311]
- Ph.D. Programs Foundation of Ministry of Education of China [20110091110032]
This letter reports high performance AlGaN solar-blind avalanche photodiodes (APDs) with separate absorption and multiplication structure grown by metal-organic chemical vapor deposition on AlN templates. In fabricating APD devices, we applied a photo-electrochemical treatment process after mesa etching to reduce damage induced by etching. After introducing this process, the leakage current of the fabricated devices was reduced obviously and a record-high gain of 1.2 x 10(4) at the reverse bias of 84 V was achieved under the measurement condition with the protection current constrained to 10(-5) A.
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