期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 11, 页码 1076-1078出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2354679
关键词
Ar plasma; Fermi-level unpinning; germanium; specific contact resistivity; titanium dioxide
资金
- Basic Science Research Program through the National Research Foundation of Korea
- Ministry of Science, ICT, and Future Planning [2014R1A1A1036090]
- Technology Innovation Program - Ministry of Trade, Industry and Energy (MI, Korea) [10048594]
- IC Design Education Center, Korea Advanced Institute for Science and Technology, Daejeon, Korea
- Korea Evaluation Institute of Industrial Technology (KEIT) [10048594] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2014R1A1A1036090, 2013H1A2A1033071] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16x10(-3) Omega.cm(2) on moderately doped n-type Ge substrate (6 x 10(16)cm(-3)) was achieved, exhibiting x584 reduction from Ti/Ge structure, and x11 reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.
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