4.6 Article

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

期刊

IEEE ELECTRON DEVICE LETTERS
卷 35, 期 12, 页码 1257-1259

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2362143

关键词

Lateral coupling; electric-double-layer; thin-film transistors

资金

  1. Zhejiang Provincial Natural Science Foundation of China [LR13F040001, LY14A040009]
  2. Priority Academic Program Development of Jiangsu Higher Education Institutions

向作者/读者索取更多资源

Laterally coupled indium-zinc-oxide electric-double-layer (EDL) transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-current ON/OFF ratio of similar to 3.1 x 10(6) and a high-electron mobility of similar to 8.8 cm(2)/V s are obtained. Furthermore, AND logic operation is demonstrated when two in-plane gate electrodes are used as the input terminals. Such low-voltage laterally coupled oxide EDL transistors have potential applications in portable biosensors and synaptic electronics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据