期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 3, 页码 402-404出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2300013
关键词
Scaling; MOSFET; performance benchmarking; 2D material
In this letter, we propose a nonplanar transition metal dichalcogenide (TMD) channel field effect transistor and explore its ballistic performance in the ultimate scaling limit of sub-5 nm physical gate length (L-g) using self-consistent nonequilibrium Greens function framework. It is observed that electrostatic integrity remains intact even at such ultrashort L-g and physical scaling is eventually limited by direct source-drain tunneling. Benchmarking different TMD channels at various off-state current conditions shows potential for ultralow-leakage applications with small footprint, excellent energy efficiency, and moderate performance.
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