期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 10, 页码 1001-1003出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2345130
关键词
AlGaN/GaN; passivation; reliability; dynamic ON resistance
资金
- I-Rice Program through National Chiao Tung University, Hsinchu, Taiwan
- University of California at Berkeley, Berkeley, CA, USA
- Ministry of Science and Technology, Taiwan
- Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu [NSC-103-2911-I-009-302]
A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result.
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