期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 8, 页码 853-855出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2329892
关键词
Indium zinc tin oxide semiconductor; high mobility; passivation; nitride film; hydrogen; thin-film transistors
资金
- National Research Foundation of Korea through the Ministry of Education, Science and Technology, Korean Government [2012 R1A2A2A0 2005854]
- National Research Foundation of Korea [2012R1A2A2A02005854, 22A20130012459] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm(2)/V s, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I-ON/OFF ratio of >2 x 10(8). The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.
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