4.6 Article

Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors

期刊

IEEE ELECTRON DEVICE LETTERS
卷 35, 期 1, 页码 141-143

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2290555

关键词

Silicon nanowire; reconfigurable transistor; RFET; inverter; logic gates; transient simulations

资金

  1. Deutsche Forschungsgemeinschaft in the framework of the Project ReproNano [MI 1247/6-1]
  2. Cluster of Excellence CfAED

向作者/读者索取更多资源

A feasibility and performance study of electrically reconfigurable nanowire transistors with selectable pFET and nFET operations is presented. The challenges toward circuit implementation are evaluated based on transient simulations of logic circuits. A novel physical structure capable of computing a NAND as well as NOR function is introduced. The new approach provides a flexible platform to develop and test fine-grain reconfigurable circuits and systems.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据