期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 4, 页码 452-454出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2304970
关键词
Plasma immersion ion implantation; memristor; gadolinium oxide; resistive switching; hydrogen; oxygen vacancy
资金
- National Science Council of Taiwan [NSC 102-2221-E-182-063, NSC 100-2623-E-182-005-NU]
Multilevel resistive switching (RS) of gadolinium oxide (GdxOy) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt/GdxOy interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the GdxOy memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than 10(4) s at 85 degrees C, and sequentially cycling test for more than 10(3) times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.
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