3.7 kV Vertical GaN PN Diodes

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10(4) cm(-2)) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (R-sp) of 2.95 m Omega-cm(2).