期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 12, 页码 1302-1304出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2365478
关键词
Drift; dual-gate (DG); hysteresis; ion-sensitive field-effect transistor (ISFET); poly-Si; sensitivity
资金
- National Science Council of Taiwan [NSC100-2221-E-009-012-MY3]
We investigate the effect of sensing film thickness on the sensing characteristics of dual-gate (DG) poly-Si ion-sensitive field-effect transistors (ISFETs). The pH sensitivity (from 37.57 to 9.32 mV/pH) of the DG poly-Si ISFET device degrades with the increase in the sensing film thickness (from 20 to 120 nm), whereas hysteresis voltage (from 6.7 to 1.12 mV for a neutral to acid to alkaline to neural loop) and drift rate (from 13.47 to <3 mV/h at pH 7) improve accordingly. An improved hysteresis and drift phenomena are attributed to the reduction in top-gate capacitance of the sensing membrane, causing a smaller capacitive-coupling ratio (top-gate capacitance of sensing membrane to bottom-gate capacitance of tetraethylorthosilicate oxide).
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