A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power Application

In this letter, a self-compliant one-diode-one-resistor (1D1R) bipolar resistive random access memory (RRAM) has been demonstrated. By inserting a Ni/AlOy/n(+)-Si diode cell, a bipolar RRAM (TiN/HfOx/Ni) with a self-compliance current of 10 mu A is achieved. This 1D1R memory cell exhibits excellent performance, such as high ON/OFF resistance ratio (> 10(2)), good reproducibility and retention (> 10(5) s at 100 degrees C), and improved resistance distribution. And more importantly, by setting a lower SET applied voltage in the 1D1R cell, a reduced compliance current can be implemented, leading to a lower RESET voltage/current.