期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 9, 页码 936-938出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2336795
关键词
Photodetector; near-infrared (NIR); indium nitride; nanocrystals
资金
- Scientific and Technological Research Council of Turkey [109E044, 112M004, 112E052, 113M815]
- Turkish Academy of Sciences Distinguished Young Scientist Award
We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 x 10(-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes.
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