期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 2, 页码 280-282出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2295815
关键词
Chitosan-gated transistors; synaptic plasticity; electrochemical doping
资金
- National Program on Key Basic Research Project [2012CB933004]
- National Natural Science Foundation of China [11174300, 11104288]
Indium-zinc-oxide (IZO)-based electric double layer (EDL) transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the self-assembled IZO channel tuned by the proton electrostatic modulation and electrochemical doping is regarded as the synaptic weight. Synaptic behaviors like paired-pulse facilitation and long-term potentiation are mimicked in the chitosan-gated IZO-based EDL transistor. Our results suggest that gate pulse amplitude and number have great influence on the synaptic plasticity transition.
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