期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 12, 页码 1263-1265出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2364578
关键词
Complementary thin-film transistor; inverter; ring oscillator; tin monoxide (SnO); zinc oxide (ZnO)
资金
- Ministry of Science and Technology, Taiwan [MOST 100-2221-E-002-151-MY3, MOST 101-2628-E-002-020-MY3, MOST 103-2918-I-002-004]
Fully oxide thin-film transistor (TFT)-based complementary metal-oxide-semiconductor (CMOS) ring oscillators are reported, for the first time, using large-area-compatible sputtering processes. The p-channel tin monoxide (SnO) and n-channel zinc oxide (ZnO) TFTs used in the CMOS inverter have inverted-staggered bottom-gate structures. The SnO TFT exhibits a threshold voltage (V-th) of 3.5 V, field-effect mobility of 0.33 cm(2)/V-s, subthreshold swing of 2.5 V/decade, and ON/OFF current ratio of similar to 10(3). The corresponding values for the ZnO TFT are 6.22 V, 3.5 cm(2)/V-s, 350 mV/decade, and >10(6). The achieved voltage gain of the CMOS inverters is similar to 17 at a supplied voltage (V-DD) of 10 V when the geometric aspect ratio is 5. An oscillation frequency of 2 kHz is obtained from a five-stage oxide-based CMOS voltage control oscillator at (V-DD) of 14 V.
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