期刊
IEEE ELECTRON DEVICE LETTERS
卷 35, 期 1, 页码 75-77出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2289861
关键词
Amorphous In-Ga-Zn-O (a-IGZO); dual-gate (DG); metal-semiconductor field-effect transistor (MESFET); schottky contact
In this letter, the electrical properties of bottom-gate and dual gate (DG) amorphous In-Ga-Zn-O (a-IGZO) metal-semiconductor field-effect transistors (MESFETs) are studied by a 2-D numerical simulation. A subgap density of state model is proposed and used in the simulation. The bottom gate MESFET shows field-effect mobility (mu(FE)) of 9 cm (2)/V s, threshold voltage (V-th) of -6.3 V, and subthreshold swing of 0.12 V/decade. The DG a-IGZO MESFET structure is suggested to effectively increase the device operational current (I-on).
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