期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 1, 页码 120-122出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2228162
关键词
Aluminum oxide; dielectric stacking; hafnium oxide; high-kappa dielectrics; metal-insulator-metal (MIM) capacitor
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0083540]
- IT R&D program of MKE/KEIT [KI002083]
The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据