Enhanced Inversion Mobility on 4H-SiC (11(2)over-bar0) Using Phosphorus and Nitrogen Interface Passivation

Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (11 (2) over bar0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO2/a-face 4H-SiC interface using phosphorus, yielding field effect mobility of similar to 125 cm(2)/V . s. We also revisit the conventional NO passivation, for which a mobility of similar to 85 cm(2)/V . s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.