Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

A pathway to increase the threshold voltage (V-TH) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of V-TH in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge. We demonstrate that a bridged p-GaN gate HEMT structure increases the V-TH from 0.93 to 2.44 V.