期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 5, 页码 662-664出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2253756
关键词
Colloidal quantum dots (CQD); infrared detectors; infrared image sensors; photodetector; photodiodes
Photodiodes, based on PbS colloidal quantum dots (CQD), are realized on both silicon substrates and the replicas of the read-out integrated circuits (ROICs) to demonstrate the first, fully integrated focal plane arrays. Careful optimization of PbS CQD film formation and ligand exchange process, together with optimized process steps, resulted in high performance, monolithically integrable photodiodes. High quantum efficiencies of 32% are achieved for photodiodes on Si substrates and high responsivities up to 5.73 A/W is achieved for photodiodes on ROIC replicas. These detectors achieved very high, normalized detectivities of 1.36 x 10(11) Jones and 1.42 x 10(12)Jones under 1 and 2-V reverse bias, respectively, that are close to conventional InGaAs short wave infrared detectors.
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