期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 8, 页码 1008-1010出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2266371
关键词
Density functional theory; In-Ga-Zn-O; thin-film-transistor (TFT) memory; Zn-doped Al2O3
资金
- National Natural Science Foundation of China [61274088, 61076076]
- [NCET-08-0127]
A novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film-transistor memory. The gate insulating stack of Al2O3/ZAO/Al2O3 is assembled in a single ALD step, and is found to possess a high electron storage capacity due to very deep defect levels. The memory device shows a threshold voltage shift as large as 6.38 V after a +15V/1 ms programming pulse, and quite good charge retention. Once programmed, the memory can be only light erased. The underlying mechanisms are discussed with the assistance of density functional theory calculations.
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