期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 1, 页码 81-83出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2223653
关键词
Nickel oxide (NiO) thin film; optical device; p-n junction; UV photodetector
资金
- DST, Government of India
- CSIR
- University of Delhi
The development of a short-wavelength p-n junction device is essentially important for the realization of transparent electronics for next-generation optoelectronics. Nickel oxide (NiO) thin films with a tunable electrical conductivity of both p-type and n-type under the optimized growth conditions using RF sputtering technique with high optical transmission in the visible region have been fabricated. The room-temperature conductivities for n-type and p-type NiO thin films were about 5.91 x 10(1) and 1.9 x 10(-2) S . cm(-1), respectively. A p-n junction of NiO thin film has been realized, successfully exhibiting good rectifying behavior with efficient UV photodiode characteristics, providing suitable solution for low-cost visible blind UV photodetector application.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据