期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 4, 页码 520-522出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2246759
关键词
Cutoff frequency; organic thin-film transistors; scattering parameters; semiconductor device modeling
资金
- German Research Foundation [BU 1962/4-1]
This letter presents the first comprehensive experimental studies on the frequency response of staggered low-voltage organic thin-film transistors (OTFTs) using S-parameter measurements. The transistors utilize air-stable dinaphtho-thienothiophene as the organic semiconductor with various channel lengths and gate overlaps. A peak cutoff frequency of 3.7 MHz for a channel length of 0.6 mu m, gate overlap of 5 mu m, and a supply voltage of 3 V is achieved. In view of the low supply voltage and air-stability, this result marks a record achievement in OTFT technology. The channel length dependence of the cutoff frequency is described in a compact model and a close correspondence to the measured data of OTFTs with variable device dimensions is shown. Moreover, the cutoff frequencies at different gate biases are found to be proportional to the dc transconductance.
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