4.6 Article

Temperature-Compensated High-Frequency Surface Acoustic Wave Device

期刊

IEEE ELECTRON DEVICE LETTERS
卷 34, 期 12, 页码 1572-1574

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2283305

关键词

LiNbO3 thin film; radio frequency; surface acoustic wave (SAW); temperature compensation

资金

  1. National Natural Science Foundation [61025021, 60936002, 61020106006]
  2. National Key Project of Science and Technology of China [2011ZX02403-002]
  3. University Grant Council of the Government of HKSAR [AoE/P-04/08]

向作者/读者索取更多资源

We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO3 thin film on SiO2/LiNbO3 substrate. SAW devices with a wavelength of 2 mu m have been fabricated and several wave modes ranging from similar to 1.5 to 2.1 GHz have been obtained. With the SiO2 interlayer providing the temperature compensation and the top single-crystal Z-cut LiNbO3 piezoelectric thin film for acoustic wave excitation, the fabricated SAW devices exhibit excellent temperature coefficients of frequency. Theoretical calculations are presented to elucidate temperature compensation of the proposed layered structure.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据