期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 2, 页码 253-255出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2230242
关键词
Photo-bias stability; thermal oxidation; thin-film transistors (TFTs); titanium oxide; zinc tin oxide (ZTO)
资金
- Industrial Strategic Technology Development Program
- Ministry of Knowledge and Economy/Korea Evaluation Institute of Industrial Technology [10041808]
This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm(2)/V . s) compared with that (14.1 cm(2)/V . s) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiOx-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photoinduced hole carriers into the underlying SiNx bulk region.
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