Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (V-set), reset voltage (V-reset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.