期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 12, 页码 1515-1517出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2284916
关键词
Defect engineering; reliability; resistive switching; retention
资金
- POSTECH-Samsung Electronics ReRAM Cluster Research
- Research and Development Program of the Ministry of Knowledge Economy
The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (V-set), reset voltage (V-reset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.
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