期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 7, 页码 831-833出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2259573
关键词
Germanium tin (GeSn); hole mobility; pMOSFET
Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.
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