期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 9, 页码 1166-1168出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2271783
关键词
Active-matrix organic light-emitting diode (AMOLED); amorphous indium-gallium-zinc oxide (a-IGZO); thin-film transistor (TFT)
资金
- Advanced Optoelectronic Technology Center
- National Cheng Kung University
- Ministry of Education
- National Science Council of Taiwan (NSC) [101-2221-E-006-221-MY3]
- INNOLUX Corporation
This letter presents a novel active-matrix organic light-emitting diode (AMOLED) pixel circuit that uses amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a bottom-gate structure to compensate for the threshold voltage shift of the TFT. An a-IGZO TFT driven AMOLED display (70 x 70 pixels) on a glass substrate is fabricated and its reliability is evaluated under electrical stress.
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